SBIR / STTR #OSW26BZ06-NV026

SBIR Solicitation for Defect Metrology and Charge Trapping Dynamics in Transfer-Doped Diamond Transistors

This opportunity seeks innovative research and development services for defect metrology and charge trapping dynamics in transfer-doped diamond transistors, managed by the U.S. Army DEVCOM under the SBIR/STTR program. - Government Buyer: - U.S. Army DEVCOM (Development Command) - Solicitation managed by the Office of the Secretary of Defense (OSD) - OEMs and Vendors: - No specific OEMs or commercial vendors are named; focus is on R&D and prototype development - Products/Services Requested: - Phase I: Feasibility study for a non-destructive metrology technique to identify and characterize charge traps in hydrogen-terminated diamond transistors - Phase II: Prototype development and validation of a laboratory apparatus for defect metrology, including delivery of hardware, documentation, and training - Use of Government Furnished Property (diamond devices) for validation - Unique/Notable Requirements: - Technology must improve reliability of diamond RF transistors for military sensing and communications - Commercial potential in advanced diamond semiconductor manufacturing - Compliance with export control laws, security risk evaluation, Cybersecurity Maturity Model Certification (CMMC), and government registration - Hands-on training and comprehensive Standard Operating Procedure manual required for Government personnel - The procurement is structured in SBIR phases, with a 6-month feasibility study followed by prototype development and validation

Description

This solicitation is part of the SBIR / STTR program, focusing on defect metrology and charge trapping dynamics in transfer-doped diamond transistors. It involves research and development in the physical sciences related to diamond transistors. The solicitation includes specific instructions and preface documents available for download. The opportunity is a pre-release topic under the SBIR program.

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