SBIR / STTR #OSW26BZ06-DV027

Development of Monolithic Graphene–CMOS Broadband Image Sensors for Naval ISR

This opportunity is for small businesses to develop advanced monolithic graphene-on-CMOS broadband image sensors for naval intelligence, surveillance, and reconnaissance (ISR) applications. - Government Buyer: - U.S. Navy (Evgeniya Lock, program manager) - Office of the Secretary of Defense (SBIR program management) - OEMs and Vendors: - No specific OEMs or vendors are named; technology focus is on graphene and CMOS integration - Products/Services Requested: - Wafer-scale, monolithically integrated graphene-on-CMOS broadband image sensor - Broadband imaging range: 300 nm to 10,000 nm (UV to LWIR) - Compact, low-power, uncooled sensor design - Prototype focal plane array (FPA) camera for demonstration - Performance modeling, material quality validation, integration yield, and environmental assessment - Unique/Notable Requirements: - Direct-to-Phase-II SBIR proposals only (Phase I feasibility must be documented) - Emphasis on improved graphene material quality, integration yield, and device uniformity - Dual-use potential for automotive, machine vision, and medical imaging - Transition path to naval platforms - Compliance with SBIR eligibility, performance benchmarks, and security/cyber requirements

Description

This solicitation is for the development of Monolithic Graphene–CMOS Broadband (UV-LWIR) Focal Plane Arrays designed for target detection in low-light conditions. It is part of the DOD SBIR 2026 program and targets Phase II and SPII phases. The solicitation is managed by the Office of the Secretary of Defense (OSD) component. The response deadline for proposals is February 17, 2017, with a question submission deadline of February 9, 2017.

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