SAM #80NSSC26936816Q

NASA RFI: Dry Etching Services for GaN Epitaxial Layer on SiC Substrate

NASA Shared Services Center is seeking information for specialized dry etching services involving advanced semiconductor materials. - Government Buyer: - NASA Shared Services Center - Products/Services Requested: - Dry etching of a combined Gallium Nitride (GaN) Epitaxial Layer and Silicon Carbide (SiC) Substrate - All technical requirements are detailed in an attached Statement of Work (SOW) (not provided in the summary) - OEMs and Vendors: - No specific OEMs or vendors are named in the available information - Unique or Notable Requirements: - Focus on advanced semiconductor processing (dry etching of GaN on SiC) - Intended for highly specialized applications, likely in aerospace or high-performance electronics - No quantities, part numbers, or specific technical parameters are disclosed in the summary

Description

See the attached SOW.

All correspondence should reference ID# to ensure visibility. 

PLEASE NOTE THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME.  A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.

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