SAM #NIST-OAAM-AMD-TPO-SN-26-09

Exclusive Patent License Opportunity: Silicon Carbide Cold Field Electron Emitters

This notice announces NIST's intent to grant an exclusive patent license for silicon carbide cold field electron emitter technology. - Agency: National Institute of Standards and Technology (NIST), U.S. Department of Commerce - Prospective Licensee: Julia Jean LLC, Columbia Falls, Montana - Technology: Cold cathode electron field emitters based on silicon carbide structures - Covered Patents/Applications: - US Provisional Patent Application 61/589,954 (NIST Ref. 12-009) - US Patent 8,907,553 B2 (NIST Ref. 12-009) - US Patent 9,324,534 B2 (NIST Ref. 12-009D) - US Patent 9,558,907 B2 (NIST Ref. 12-009D2) - Scope: Exclusive, worldwide license for research, development, manufacturing, and commercialization - License Terms: Royalty bearing, subject to 35 U.S.C. 209 and 37 CFR 404.7 - Opportunity: Other parties may submit written objections or competing license applications - Commercial Opportunity: Access to patented silicon carbide electron emitter technology for product development

Description

U.S. DEPARTMENT OF COMMERCE

National Institute of Standards and Technology

Prospective Grant of Exclusive Patent License

AGENCY:  National Institute of Standards and Technology, Department of Commerce

ACTION:  Notice; prospective grant of exclusive patent license.

SUMMARY:  This is a notice in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i) that the National Institute of Standards and Technology (“NIST”), U.S. Department of Commerce, is contemplating the grant to Julia Jean LLC, of Columbia Falls, Montana, of an exclusive license to NIST's interest in the inventions embodied in the following patents and patent applications:

a.         United States Provisional Patent Application Serial No. 61/589,954, filed January 24, 2012, and entitled, “COLD CATHODE ELECTRON FIELD EMITTERS BASED ON SILICON CARBIDE STRUCTURES” [NIST Reference no. 12-009];

b.         United States Patent No. 8,907,553 B2, issued December 9, 2014, and entitled, “COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES” [NIST Reference no. 12-009];

c.         United States Patent No.         9,324,534 B2, issued April 26, 2016, and entitled, “COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES” [Division of (b); NIST Reference no. 12-009D]; and

d.         United States Patent No.         9,558,907 B2, issued January 21, 2017, and entitled, “COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES” [Division of (c); NIST Reference no. 12-009D2].

The prospective exclusive license territory may be worldwide, and the field of use may be limited to the following:

“Research, Development, Manufacturing, and Commercialization of the Licensed Patent Rights for the creation of Licensed Products.”

FOR FURTHER INFORMATION, CONTACT:  Patrick McCue, Patenting and Licensing Manager, National Institute of Standards and Technology, Technology Partnerships Office, 100 Bureau Drive, Stop 2200, Gaithersburg, MD 20899, or emailed to patrick.mccue@nist.gov.

SUPPLEMENTARY INFORMATION:  The prospective exclusive license will be royalty bearing and will comply with the terms and conditions of 35 U.S.C. 209 and 37 CFR 404.7. The prospective exclusive license may be granted unless, within fifteen (15) days from the date of this published Notice, NIST receives written evidence and argument which establish that the grant of the license would not be consistent with the requirements of 35 U.S.C. 209 and 37 CFR 404.7.

Dates:  Only written comments or applications for a license (or both) which are received by the NIST Technology Partnerships Office on or before July 1, 2026 will be considered.

Bethany Loftin,

Director, Technology Partnerships Office

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