Opportunity
SBIR / STTR #DMEA254-P001
RF Frontend Design on GlobalFoundries GaN-on-Si Technology for Military and Commercial Applications
Buyer
Defense Microelectronics Activity
Posted
July 17, 2016
Respond By
July 09, 2017
Identifier
DMEA254-P001
NAICS
334419, 334220
The Defense Microelectronics Activity (DMEA), part of the Department of Defense, is seeking small business proposals for the design, development, and demonstration of integrated low-noise amplifiers (LNA) and power amplifiers (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology. - Government Buyer: - Department of Defense, Defense Microelectronics Activity (DMEA), Office of Small Business Programs (OSBP) - OEMs and Vendors: - GlobalFoundries (primary GaN-on-Si technology provider) - Finwave Semiconductor (referenced as a technology partner) - Qorvo (referenced for discrete PA and LNA chips) - Products/Services Requested: - Design, development, and demonstration of integrated LNA and PA on GlobalFoundries 200-mm GaN-on-Si (130RFG1) technology - Includes feasibility studies, simulations, fabrication, packaging, testing, and delivery of prototypes, test boards, and technical data packages - Delivery of intellectual property (IP) with licensing fees under $50,000 per instantiation - Unique/Notable Requirements: - DMEA accreditation as a Trusted Supplier is required for Phase II - Compliance with GlobalFoundries design and manufacturing rules - Access to silicon space via a GlobalFoundries MPW/Shuttle run as Government Furnished Equipment - Supports dual-use applications: radar, communications, sensors, and electronic warfare - Project is structured in phases: Phase I (feasibility, simulation), Phase II (prototype fabrication/testing), Phase III (dual-use application development) - Quantities and Part Numbers: - No specific quantities or part numbers provided; focus is on prototype development and delivery of samples
Description
This solicitation seeks the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) using a commercially available 200-mm GlobalFoundries GaN-on-Si technology. The goal is to improve output power density, linearity, and efficiency in radio communication systems for military and commercial applications. Phase I involves demonstrating feasibility with simulations and assessments, while Phase II focuses on fabricating and testing functional prototypes. The project supports dual-use applications including radar, communications, sensors, and electronic warfare.