# University of Missouri Ionwave #27-0052 Addendum 1

One ALD system for Missouri S&T’s semiconductor engineering cleanroom

**Posted:** October 20, 2026
**Respond By:** November 03, 2026
**Identifier:** 27-0052 Addendum 1
**NAICS:** 334516, 423490

The University of Missouri is seeking one Atomic Layer Deposition System for Missouri S&T’s Semiconductor Engineering cleanroom program.
- **Buyer:** University of Missouri, UM Procurement, for Missouri S&T.
- **OEMs and vendors:** No equipment manufacturers, OEMs, or resellers are named. TMA, TDMAT, BDEAS, and TEMAHf are precursor chemicals, not vendors.
- **Main equipment:** One Atomic Layer Deposition (ALD) System, with thermal ALD and remote plasma PEALD, a loadlock, and capacity for substrates from 1 cm × 1 cm coupons through 6-inch wafers.
- **Precursors and processes:** Four sources—TMA, TDMAT, BDEAS, and TEMAHf—are acceptable. The system must support Ti, Hf, and Al precursors and initial recipes for Al2O3, HfO2, SiO2, TiO2, TiN, and AlN.
- **Technical requirements:** Heated precursor bubblers and delivery lines; H2O oxidant; O2 plasma; N2, O2, Ar, and H2O process gases; preferably room temperature to 400°C or higher wafer temperature; and a pump and foreline. Supplier must provide utility documentation and detailed system literature.
- **Other requested pricing:** Software/hardware if applicable, maintenance/service agreement, training and installation if applicable, shipping/freight, and a discount. The system must include a 24-month warranty.
- **Contract term:** Two years from award, with pricing firm during the initial term.

### Description

The University of Missouri requests bids for furnishing and delivery of one Atomic Layer Deposition System for undergraduate courses in the new cleanroom of Missouri S&T’s Semiconductor Engineering bachelor’s degree program. Requirements include thermal ALD and remote plasma PEALD, a loadlock, precursor sources, heated precursor bubblers and delivery lines, specified process gases, and capability to deposit Al₂O₃, HfO₂, SiO₂, TiO₂, TiN, and AlN. The system must support substrates from 1 cm × 1 cm coupon pieces through 6-inch wafers and includes a requested 24-month warranty and utility documentation. Bids must be submitted through the University of Missouri System’s electronic bidding platform by November 3, 2026, at 2:00 PM CT; the buyer states four precursor sources are acceptable in response to a bidder question.

[View original listing](https://umsystembids.ionwave.net/PublicDetail.aspx?bidID=1063&SourceType=1)